Top-down nanofabrication
We develop novel methods based on advanced nanolithographies to fabricate nanometer scale structures and devices of interest for integrated micro/nano systems.
Bottom-up nanofabrication
This research line focuses on developing scalable and cost-effective bottom-up nanofabrication technologies based on directed self-assembly (DSA) of block copolymers (BCPs). The intrinsic self-organizing properties of BCPs enable the formation of highly ordered nanostructures with dimensions beyond the limits of traditional top-down lithography. Advanced DSA techniques such as graphoepitaxy and chemical patterning, guide the self-assembly process, allow precise control over the placement and orientation of these nanostructures.
DSA of BCPs is employed as a lithography technique by selectively removing one of the polymer blocks and using the remaining block as a etch mask. This approach facilitates the fabrication of high-resolution nanopatterns for applications in nanoelectronics and quantum devices.
To further enhance their functionality, sequential infiltration synthesis (SIS) by atomic layer deposition (ALD) is applied to transform the self-assembled patterns into robust metal oxide nanostructures, such as nanopillars, nanowires, and nanomeshes with tailored properties. These structures are integrated into functional devices such as NEMS or sensors, expanding their application potential.
This research bridges the gap between traditional top-down and innovative bottom-up fabrication methods, providing solutions to critical challenges in CMOS scaling, quantum device fabrication and advanced nanoelectronics.