Description: Production of extremely low-energy dissipation Single Electron Transistor devices in the framework of CMOS technology for a straightforward integration into industrial processes.
Title: Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology
2016-2020. Grant agreement ID: 688072
Horizon 2020, Programme Industrial Leadership, area “Information and Communication Technologies”, topic “Generic micro- and nano-electronic technologies”.